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Freescale Semiconductor Technical Data
Document Number: MHPA19010N Rev. 6, 5/2006
PCS Band RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Typical CDMA Performance: 1960 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 * Adjacent Channel Power: - 51 dBc @ 30 dBm, 885 kHz Channel Spacing * Power Gain: 24.5 dB Min (@ f = 1960 MHz) * 0.2 dB Typical Gain Flatness Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * N Suffix Indicates Lead - Free Terminations
MHPA19010N
1930- 1990 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Quiescent Bias Current Symbol VDD Pin Tstg TC IDQ Value 30 +20 - 40 to +100 - 20 to +100 750 Unit Vdc dBm C C mA
Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 600 mA, TC = 25C, 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 1960 MHz) (f = 1930 - 1990 MHz) (f = 1960 MHz) (f = 1930 - 1990 MHz) (f = 1960 MHz) Symbol IDD Gp GF P1dB VSWRin NF ACPR Min -- 24.5 -- -- -- -- -- Typ 600 25 0.2 41.5 1.5:1 8 - 58 Max -- -- 0.5 -- 2:1 10 - 51 dB dBc Unit mA dB dB dBm
Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW, 885 kHz Channel Spacing
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHPA19010N 1
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
10 IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB) 5 0 -5 -10 -15 -20 -25 -30 1930 1940 1950 1960 1970 1980 IRL ORL VDD = 28 Vdc Pout = 5 W IDQ = 600 mA 100 kHz Tone Spacing Gps 28 27 26 25 24 23 22 21 20 1990 28 27 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 26 -10_C 85_C -10_C 25_C 21 85_C 20 1920 1930 1940 1950 1960 1970 1980 1990 4 2000 6 VDD = 28 Vdc Pout = 1 W (Avg.) IDQ = 600 mA 14 12 10 8 25 24 23 22 Gps TC = 25_C 2-Carrier CDMA Carrier Spacing = 2.5 MHz Carrier Bandwidth = 1.2288 MHz 20 18 16 , DRAIN EFFICIENCY (%)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 1. Two - Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
Figure 2. 2 - Carrier CDMA Power Gain and Efficiency versus Frequency
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, INTERMODULATION DISTORTION (dBc)
-35 TC = -10_C -40 25_C 85_C ACPR -50 -10_C 25_C -55 85_C ACPR @ 885 kHz, Bandwidth = 30 kHz IM3 @ 2.5 MHz, Bandwidth = 1.2288 MHz -60 1920 1930 1940 1950 1960 1970 1980 1990 IM3 2-Carrier CDMA, Carrier Spacing = 2.5 MHz Carrier Bandwidth = 1.2288 MHz VDD = 28 Vdc, POUT = 1 W (Avg.), IDQ = 600 mA
-20
-25 -30 -35 -40 -45 100 kHz -50 10 MHz -55 -60 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) PEP VDD = 28 Vdc, IDQ = 600 mA 100 kHz: f1 = 1959.95 MHz f2 = 1960.05 MHz 10 MHz: f1 = 1955 MHz f2 = 1965 MHz
-30
-45
-40
-50
-60
-70 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier CDMA IM3 and ACPR versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), P out OUTPUT POWER (dBm)
Figure 4. Two - Tone CDMA IMD versus Output Power
-25 -30 -35 500 mA -40 -45 -50 -55 -60 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) PEP 600 mA VDD = 28 Vdc f1 = 1959.95 MHz f2 = 1960.05 MHz 700 mA IDQ = 800 mA
48 42 36 30 Pout 24 18 12 6 0 -5 0 5 10 PIN, (dBm) VDD = 28 Vdc IDQ = 600 mA f = 1960 MHz 15 20 25 Gps
27.5 27 26.5 26 25.5 25 24.5 24 23.5 G ps , POWER GAIN (dB)
Figure 5. Third Order Intermodulation Distortion versus Output Power MHPA19010N 2
Figure 6. CW Output Power, Efficiency and Gain versus Input Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
-30 -35 -40 IM3 (dBc), ACPR (dBc) -45 -50 -55 -60 -65 -70 -75 -80 5 10 ACPR 15 20 25 30 IM3 VDD = 28 Vdc IDQ = 600 mA f1 = 1960 MHz f2 = 1962.5 MHz 10 9 , DRAIN EFFICIENCY (%) 8 7 6 5 4 3 2 1 0 35
Pout, OUTPUT POWER (dBm)
Figure 7. 2 - Carrier CDMA ACPR, IM3 and Efficiency versus Output Power
MHPA19010N RF Device Data Freescale Semiconductor 3
NOTES
MHPA19010N 4 RF Device Data Freescale Semiconductor
NOTES
MHPA19010N RF Device Data Freescale Semiconductor 5
NOTES
MHPA19010N 6 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A G 0.020 (0.51)
M
A S
2X
Q 0.008 (0.20)
M
TS
M
A
M
TA
M
B
R J K W
4X 1 2 3 4
S
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC
D
M
N L H F E C T
SEATING PLANE M
0.020 (0.51)
M
TB
4X
P 0.020 (0.51)
T
DIM A B C D E F G H J K L N P Q R S W
STYLE 3: PIN 1. 2. 3. 4. CASE:
RF INPUT VBIAS VDD RF OUTPUT GROUND
CASE 301AP - 02 ISSUE E
Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2).
MHPA19010N RF Device Data Freescale Semiconductor 7
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RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MHPA19010N 8Rev. 6, 5/2006
Document Number: MHPA19010N
RF Device Data Freescale Semiconductor

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